收藏本站
HiPerFET TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t rr , HDMOS TM Family
Symbol
Test Conditions
IXFJ 13N50 V DSS
I D (cont)
R DS(on)
t rr
Maximum Ratings
= 500
= 13
= 0.4
￡ 250
V
A
W
ns
V DSS
T J = 25 ° C to 150 ° C
500
V
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C; R GS = 1 M W
Continuous
Transient
500
± 20
± 30
V
V
V
G
D
S
é
(TAB)
I D25
I DM
I AR
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
13
52
13
A
A
A
G = Gate,
S = Source,
D = Drain,
TAB = Drain
E AR
dv/dt
P D
T J
T JM
T stg
T L
Weight
T C = 25 ° C
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
18
5
180
-55 ... +150
150
-55 ... +150
300
5
mJ
V/ns
W
° C
° C
° C
° C
g
Features
? Low profile, high power package
? Long creep and strike distances
? Easy up-grade path for TO-220
designs
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
- easy to drive and to protect
? Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
?
?
?
?
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
V DSS
V GS(th)
I GSS
V GS = 0 V, I D = 250 m A
V DS = V GS , I D = 2.5 mA
V GS = ± 20 V DC , V DS = 0
500
2
4
± 100
V
V
nA
?
?
?
?
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
I DSS
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
200
1
m A
mA
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
0.4
W
? High power, low profile package
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98578 (2/99)
1-4
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXFJ32N50Q MOSFET N-CH 500V 32A TO-220
IXFJ40N30 MOSFET N-CH 300V 40A TO-220
IXFK100N10 MOSFET N-CH 100V 100A TO-264AA
IXFK100N25 MOSFET N-CH 250V 100A TO-264AA
IXFK102N30P MOSFET N-CH 300V 102A TO-264
IXFK110N07 MOSFET N-CH 70V 110A TO-264AA
IXFK120N20P MOSFET N-CH 200V 120A TO-264
IXFK120N20 MOSFET N-CH 200V 120A TO-264AA
相关代理商/技术参数
IXFJ32N50Q 功能描述:MOSFET 32 Amps 500V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFJ36N30 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET
IXFJ40N30 功能描述:MOSFET 40 Amps 300V 0.085 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK100N10 功能描述:MOSFET 100 Amps 100V 0.012 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK100N-10 制造商:IXYS Corporation 功能描述:Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264AA 制造商:Ixys Corporation 功能描述:Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264AA
IXFK100N25 功能描述:MOSFET 100 Amps 250V 0.027 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK102N30P 功能描述:MOSFET 102 Amps 300V 0.033 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK105N07 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs